Плазмодинамический синтез нанодисперсного карбида кремния и управление характеристиками продукта
| Parent link: | Известия вузов. Физика/ Национальный исследовательский Томский государственный университет (ТГУ).— , 1958- Т. 57, № 12-3.— 2014.— [С. 299-303] |
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| Summary: | Заглавие с экрана Приведены результаты экспериментальных исследований по синтезу ультрадисперсного карбида кремния при воздействии гиперскоростной струи кремний-углеродной электроразрядной плазмы на медную преграду. Методами рентгеновской дифрактометрии, сканирующей и просвечивающей электронной микроскопии установлено значительное увеличение содержания в продукте β-фазы SiC до 88 мас. % и среднего размера кристаллитов примерно от 70 до 140 нм при росте энергетики процесса примерно от 10.0 до 30.0 кДж. Synthesis of silicon carbide is interested due to the presence of a wide range of his unique mechanical, thermal and electrical properties: superhardness, strength, thermal and corrosion resistance, radiation hardness, unique semiconductor characteristics [1, 2]. The first successful synthesis of SiC was realized by Acheson in 1892 and the most of the SiC powders produced today is manufactured using the Acheson process. There are a great number of nano-SiC synthesis techniques: combustion synthesis (SHS and VCS), physical vapor transport (PVT), chemical vapour deposition (CVD), sol-gel, liquid phase sintering, mechanical alloying and plasmochemical synthesis [1, 3]. But the unique mentioned properties of the produced SiC cannot be generally realized due to dependence on the synthesis methods. In this connection the development of new simple and productive methods for the direct synthesis of nanodispersed high-quality silicon carbide is an important problem. Synthesis method needs to have such advantages as lower energy requirement, simpler and cheaper equipment, higher product purity, and finer and well-sintered starting powders [2]. The paper presents the results of the plasmodinamic synthesis and the ability to control the synthesis process and change characteristics of the product. The above method can be realized in a high-speed pulse jet of the dense Si-C plasma. The fundamental possibility of silicon carbide synthesis by proposed method was shown in the paper [4]. Режим доступа: по договору с организацией-держателем ресурса |
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2014
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| Online Access: | http://elibrary.ru/item.asp?id=23815804 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=644525 |