Macroparticles number density decreasing on a substrate immersed in vacuum arc plasma at repetitively pulsed biasing

Bibliografiske detaljer
Parent link:Известия вузов. Физика: научный журнал.— , 1957-
Т. 57, № 12/3.— 2014.— [P. 259-262]
Corporate Authors: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Лаборатория № 22, Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Центр измерений свойств материалов (ЦИСМ)
Andre forfattere: Ryabchikov A. I. Aleksandr Ilyich, Sivin D. O. Denis Olegovich, Bumagina A. I. Anna Ivanovna, Ananin P. S. Petr Semenovich, Dektyarev S. V. Sergey Valentinovich
Summary:Title screen
The objective of this investigation was to study the physical mechanisms of macroparticles (MPs) number density decreasing on a substrate immersed in a vacuum arc plasma. It was found that negative repetitively pulsed biasing of the substrate significantly reduced the MPs content on surface. Several different physical mechanisms for the MPs decreasing have been identified. It was established that up to 10 % of the MPs are repelled by the sheath electric field. Reduction of MPs density by almost 20 % is attributable to ion sputtering after 2 min of processing. It was found that enhanced ion sputtering, MPs evaporation on substrate surface, and even evaporation of MPs in a sheath, can take place depending on the cathode material and the irradiation parameters.
Режим доступа: по договору с организацией-держателем ресурса
Sprog:engelsk
Udgivet: 2014
Fag:
Online adgang:http://elibrary.ru/item.asp?id=23815795
Format: Electronisk Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=644268

MARC

LEADER 00000nla0a2200000 4500
001 644268
005 20250310141014.0
035 |a (RuTPU)RU\TPU\network\9333 
035 |a RU\TPU\network\9045 
090 |a 644268 
100 |a 20151106d2014 k||y0rusy50 ba 
101 0 |a eng 
135 |a drcn ---uucaa 
181 0 |a i  
182 0 |a b 
200 1 |a Macroparticles number density decreasing on a substrate immersed in vacuum arc plasma at repetitively pulsed biasing  |f A. I. Ryabchikov [et al.] 
203 |a Text  |c electronic 
300 |a Title screen 
320 |a [References: p. 262 (9 tit.)] 
330 |a The objective of this investigation was to study the physical mechanisms of macroparticles (MPs) number density decreasing on a substrate immersed in a vacuum arc plasma. It was found that negative repetitively pulsed biasing of the substrate significantly reduced the MPs content on surface. Several different physical mechanisms for the MPs decreasing have been identified. It was established that up to 10 % of the MPs are repelled by the sheath electric field. Reduction of MPs density by almost 20 % is attributable to ion sputtering after 2 min of processing. It was found that enhanced ion sputtering, MPs evaporation on substrate surface, and even evaporation of MPs in a sheath, can take place depending on the cathode material and the irradiation parameters. 
333 |a Режим доступа: по договору с организацией-держателем ресурса 
461 |t Известия вузов. Физика  |o научный журнал  |d 1957- 
463 |t Т. 57, № 12/3  |v [P. 259-262]  |d 2014 
610 1 |a электронный ресурс 
610 1 |a труды учёных ТПУ 
610 1 |a вакуумно-дуговые источники 
610 1 |a макрочастицы 
701 1 |a Ryabchikov  |b A. I.  |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences  |c physicist  |f 1950-  |g Aleksandr Ilyich  |3 (RuTPU)RU\TPU\pers\30912 
701 1 |a Sivin  |b D. O.  |c physicist  |c Senior researcher of Tomsk Polytechnic University, Candidate of technical sciences  |f 1978-  |g Denis Olegovich  |3 (RuTPU)RU\TPU\pers\34240 
701 1 |a Bumagina  |b A. I.  |c physicist  |c Associate Scientist of Tomsk Polytechnic University  |f 1987-  |g Anna Ivanovna  |3 (RuTPU)RU\TPU\pers\34326  |9 17835 
701 1 |a Ananin  |b P. S.  |c physicist  |c senior researcher of Tomsk Polytechnic University, candidate of physical and mathematical sciences  |f 1942-  |g Petr Semenovich  |3 (RuTPU)RU\TPU\pers\35673 
701 1 |a Dektyarev  |b S. V.  |c physicist  |c design engineer of Tomsk Polytechnic University  |f 1957-  |g Sergey Valentinovich  |3 (RuTPU)RU\TPU\pers\35672 
712 0 2 |a Национальный исследовательский Томский политехнический университет (ТПУ)  |b Физико-технический институт (ФТИ)  |b Лаборатория № 22  |3 (RuTPU)RU\TPU\col\19225 
712 0 2 |a Национальный исследовательский Томский политехнический университет (ТПУ)  |b Физико-технический институт (ФТИ)  |b Центр измерений свойств материалов (ЦИСМ)  |3 (RuTPU)RU\TPU\col\19361 
801 2 |a RU  |b 63413507  |c 20191106  |g RCR 
856 4 |u http://elibrary.ru/item.asp?id=23815795 
942 |c CF