Effect in GaAs produced by fast neutrons and protons; Control and Communications (SIBCON-2015)
| Parent link: | Control and Communications (SIBCON-2015).— 2015.— [4 p.] |
|---|---|
| Autor principal: | |
| Autor Corporativo: | |
| Otros Autores: | , |
| Sumario: | Title screen It has been found that of P-type defects to total defect formation is larger in GaAs samples irradiated with high-energy (65 MeV) protons or fast neutrons. The E4 and E5 defects are annealed out after heat treatment of such samples at a temperature near 200°C; as a result, the shape and intensity of the U band change somewhat. Режим доступа: по договору с организацией-держателем ресурса |
| Lenguaje: | inglés |
| Publicado: |
2015
|
| Materias: | |
| Acceso en línea: | http://dx.doi.org/10.1109/SIBCON.2015.7147220 |
| Formato: | Electrónico Capítulo de libro |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=643635 |
MARC
| LEADER | 00000naa0a2200000 4500 | ||
|---|---|---|---|
| 001 | 643635 | ||
| 005 | 20250604161210.0 | ||
| 035 | |a (RuTPU)RU\TPU\network\8630 | ||
| 090 | |a 643635 | ||
| 100 | |a 20150918d2015 k||y0engy50 ba | ||
| 101 | 0 | |a eng | |
| 135 | |a drcn ---uucaa | ||
| 181 | 0 | |a i | |
| 182 | 0 | |a b | |
| 200 | 1 | |a Effect in GaAs produced by fast neutrons and protons |f E. G. Soboleva, V. V. Litvinenko, T. B. Krit | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 320 | |a [References: 12 tit.] | ||
| 330 | |a It has been found that of P-type defects to total defect formation is larger in GaAs samples irradiated with high-energy (65 MeV) protons or fast neutrons. The E4 and E5 defects are annealed out after heat treatment of such samples at a temperature near 200°C; as a result, the shape and intensity of the U band change somewhat. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 463 | |t Control and Communications (SIBCON-2015) |o International Siberian Conference on Russia, Omsk, May 21-23, 2015 |v [4 p.] |o [proceedings] |d 2015 | ||
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a нейтроны | |
| 610 | 1 | |a протоны | |
| 610 | 1 | |a барьеры Шоттки | |
| 700 | 1 | |a Soboleva |b E. G. |c physicist |c Associate Professor of Yurga technological Institute of Tomsk Polytechnic University, Candidate of physical and mathematical Sciences |f 1976- |g Elvira Gomerovna |3 (RuTPU)RU\TPU\pers\32994 |9 16839 | |
| 701 | 1 | |a Litvinenko |b V. V. |g Viktoriya Vladimirovna | |
| 701 | 1 | |a Krit |b T. B. |g Timofey Borisovich | |
| 712 | 0 | 2 | |a Национальный исследовательский Томский политехнический университет (ТПУ) |b Юргинский технологический институт (филиал) (ЮТИ) |b Кафедра естественного научного образования (ЕНО) |3 (RuTPU)RU\TPU\col\18894 |
| 801 | 2 | |a RU |b 63413507 |c 20160229 |g RCR | |
| 850 | |a 63413507 | ||
| 856 | 4 | |u http://dx.doi.org/10.1109/SIBCON.2015.7147220 | |
| 942 | |c CF | ||