Effect in GaAs produced by fast neutrons and protons

Bibliographic Details
Parent link:	Control and Communications (SIBCON-2015): International Siberian Conference on Russia, Omsk, May 21-23, 2015. [4 p.].— , 2015
Main Author:	Soboleva E. G. Elvira Gomerovna
Corporate Author:	Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра естественного научного образования (ЕНО)
Other Authors:	Litvinenko V. V. Viktoriya Vladimirovna, Krit T. B. Timofey Borisovich
Summary:	Title screen It has been found that of P-type defects to total defect formation is larger in GaAs samples irradiated with high-energy (65 MeV) protons or fast neutrons. The E4 and E5 defects are annealed out after heat treatment of such samples at a temperature near 200°C; as a result, the shape and intensity of the U band change somewhat. Режим доступа: по договору с организацией-держателем ресурса
Published:	2015
Subjects:	электронный ресурс труды учёных ТПУ нейтроны протоны барьеры Шоттки
Online Access:	http://dx.doi.org/10.1109/SIBCON.2015.7147220
Format:	Electronic Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=643635

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