Radiation resistance of light-emitting diodes based on algaas-heterostructures to fast neutron and electron radiation
| Parent link: | Известия вузов. Физика: научный журнал.— , 1957- Т. 57, № 12, ч. 3.— 2014.— [С. 73-75] |
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| Corporate Authors: | , |
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| Summary: | Заглавие с экрана In the article it is determined that under separate fast neutron and electron radiation the decrease in emission intensity of light-emitting diodes based on AlGaAs - heterostructures follows in two phases. First, the emission intensity is decreasing because of the rearrangement of the defect structure, second, as the radiation defects only are introduced. The preliminary fast neutron radiation followed by that of electron causes the diminishing of the first phase in the degradation process, on the whole, and the preliminary electron radiation followed by that of neutron leads to the renewal of emission intensity in the first phase of degradation. Режим доступа: по договору с организацией-держателем ресурса |
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2014
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| Online Access: | http://elibrary.ru/item.asp?id=23815756 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=643599 |
| Summary: | Заглавие с экрана In the article it is determined that under separate fast neutron and electron radiation the decrease in emission intensity of light-emitting diodes based on AlGaAs - heterostructures follows in two phases. First, the emission intensity is decreasing because of the rearrangement of the defect structure, second, as the radiation defects only are introduced. The preliminary fast neutron radiation followed by that of electron causes the diminishing of the first phase in the degradation process, on the whole, and the preliminary electron radiation followed by that of neutron leads to the renewal of emission intensity in the first phase of degradation. Режим доступа: по договору с организацией-держателем ресурса |
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