Radiation resistance of light-emitting diodes based on algaas-heterostructures to fast neutron and electron radiation; Известия вузов. Физика; Т. 57, № 12, ч. 3

Radiation resistance of light-emitting diodes based on algaas-heterostructures to fast neutron and electron radiation

Xehetasun bibliografikoak
Parent link:Известия вузов. Физика: научный журнал.— , 1957-
Т. 57, № 12, ч. 3.— 2014.— [С. 73-75]
Egile nagusia: Rubanov P. V. Pavel Vladimirovich
Egile korporatiboa: Национальный исследовательский Томский политехнический университет (ТПУ) Институт неразрушающего контроля (ИНК) Лаборатория № 51 (Радиационных испытаний материалов и изделий), Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра естественного научного образования (ЕНО)
Beste egile batzuk: Gradoboev A. V. Aleksandr Vasilyevich
Gaia:Заглавие с экрана
In the article it is determined that under separate fast neutron and electron radiation the decrease in emission intensity of light-emitting diodes based on AlGaAs - heterostructures follows in two phases. First, the emission intensity is decreasing because of the rearrangement of the defect structure, second, as the radiation defects only are introduced. The preliminary fast neutron radiation followed by that of electron causes the diminishing of the first phase in the degradation process, on the whole, and the preliminary electron radiation followed by that of neutron leads to the renewal of emission intensity in the first phase of degradation.
Режим доступа: по договору с организацией-держателем ресурса
Hizkuntza:ingelesa
Argitaratua: 2014
Gaiak:
электронный ресурс
труды учёных ТПУ
радиационные дефекты
радиационная стойкость
нейтронное излучение
электронное излучение
гетероструктуры
Sarrera elektronikoa:http://elibrary.ru/item.asp?id=23815756
Formatua: Baliabide elektronikoa Liburu kapitulua
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=643599
Deskribapena
Gaia:Заглавие с экрана
In the article it is determined that under separate fast neutron and electron radiation the decrease in emission intensity of light-emitting diodes based on AlGaAs - heterostructures follows in two phases. First, the emission intensity is decreasing because of the rearrangement of the defect structure, second, as the radiation defects only are introduced. The preliminary fast neutron radiation followed by that of electron causes the diminishing of the first phase in the degradation process, on the whole, and the preliminary electron radiation followed by that of neutron leads to the renewal of emission intensity in the first phase of degradation.
Режим доступа: по договору с организацией-держателем ресурса

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