Research methods of reliability indicators of rectifier diode in tablet execution

Detalles Bibliográficos
Parent link:European Physical Journal Web of Conferences (EPJ Web of Conferences)
Vol. 82 : Thermophysical Basis of Energy Technologies.— 2015.— [01030, 4 р.]
Autor principal: Kurmangaliev R.
Autor Corporativo: Национальный исследовательский Томский политехнический университет (ТПУ) Энергетический институт (ЭНИН) Кафедра автоматизации теплоэнергетических процессов (АТП)
Otros Autores: Kravchenko E. V. Evgeny Vladimirovich
Sumario:Title screen
A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered. We compared the failure rates of semiconductor power devices in real thermal regime with the thermal conductivity of the statistical data.
Lenguaje:inglés
Publicado: 2015
Materias:
Acceso en línea:http://dx.doi.org/10.1051/epjconf/20158201030
Formato: Electrónico Capítulo de libro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=643108

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