Research methods of reliability indicators of rectifier diode in tablet execution

Bibliographic Details
Parent link:European Physical Journal Web of Conferences (EPJ Web of Conferences)
Vol. 82 : Thermophysical Basis of Energy Technologies.— 2015.— [01030, 4 р.]
Main Author: Kurmangaliev R.
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Энергетический институт (ЭНИН) Кафедра автоматизации теплоэнергетических процессов (АТП)
Other Authors: Kravchenko E. V. Evgeny Vladimirovich
Summary:Title screen
A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered. We compared the failure rates of semiconductor power devices in real thermal regime with the thermal conductivity of the statistical data.
Published: 2015
Subjects:
Online Access:http://dx.doi.org/10.1051/epjconf/20158201030
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=643108