Research methods of reliability indicators of rectifier diode in tablet execution; European Physical Journal Web of Conferences (EPJ Web of Conferences); Vol. 82 : Thermophysical Basis of Energy Technologies

Bibliografiske detaljer
Parent link:European Physical Journal Web of Conferences (EPJ Web of Conferences)
Vol. 82 : Thermophysical Basis of Energy Technologies.— 2015.— [01030, 4 р.]
Hovedforfatter: Kurmangaliev R.
Institution som forfatter: Национальный исследовательский Томский политехнический университет (ТПУ) Энергетический институт (ЭНИН) Кафедра автоматизации теплоэнергетических процессов (АТП)
Andre forfattere: Kravchenko E. V. Evgeny Vladimirovich
Summary:Title screen
A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered. We compared the failure rates of semiconductor power devices in real thermal regime with the thermal conductivity of the statistical data.
Sprog:engelsk
Udgivet: 2015
Fag:
Online adgang:http://dx.doi.org/10.1051/epjconf/20158201030
Format: Electronisk Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=643108