New phase synthesis in surface layer in the conditions of ion implantation

Bibliographische Detailangaben
Parent link:AIP Conference Proceedings
Vol. 1623 : International Conference on Physical Mesomechanics of Multilevel Systems 2014, Tomsk, Russia, 3–5 September 2014.— 2014.— [P. 245-249]
1. Verfasser: Khan A. Asfandyar
Körperschaft: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра физики высоких технологий в машиностроении (ФВТМ)
Weitere Verfasser: Knyazeva A. G. Anna Georgievna
Zusammenfassung:Title screen
The simple models for the formation of a new phase in a surface layer during ion implantation are discussed. The model of the new phase formation in the same conditions and considering the finiteness of relaxation time is suggested. The model parameters were evaluated using literature data. The stresses and strains in diffusion zone were calculated. The authors demonstrated that the concentration distribution and values of stresses depend on the relation between time scales of various physical processes.
Режим доступа: по договору с организацией-держателем ресурса
Sprache:Englisch
Veröffentlicht: 2014
Schlagworte:
Online-Zugang:http://dx.doi.org/10.1063/1.4898928
http://earchive.tpu.ru/handle/11683/35703
Format: Elektronisch Buchkapitel
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=641742