Temperature dependence of the dielectric strength of zinc sulfide films

Temperature dependence of the dielectric strength of zinc sulfide films

Bibliographische Detailangaben
Parent link:Russian Physics Journal.— , 1965-
Vol. 39, iss. 6.— 1996.— [P. 576-578]
Weitere Verfasser: Zhigal'skii A. A., Ikonnikova L. F. Liubov Fedorovna, Minakova T. S., Mukhachev V. A., Troyan P. E.
Zusammenfassung:Title screen
The temperature dependence of the dielectric strength Epn of ZnS:Mn films produced by high-frequency magnetron sputtering was investigated in the range T=20–200°C. It is shown that processes associated with removal of adsorbed water from the ZnS:Mn films are responsible for the maximum on the Epn=f(T) curve. Data on the temperature dependence of the capacitance and loss-angle are given for thin-film systems based on ZnS:Mn.
Режим доступа: по договору с организацией-держателем ресурса
Sprache:Englisch
Veröffentlicht: 1996
Schlagworte:
электронный ресурс
труды учёных ТПУ
Online-Zugang:http://dx.doi.org/10.1007/BF02437024
Format: Elektronisch Buchkapitel
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=641074

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