Radiation Model of Light Emitting Diode Based on AlGaInP Heterostructures with Multiple Quantum Wells

Radiation Model of Light Emitting Diode Based on AlGaInP Heterostructures with Multiple Quantum Wells

Bibliographic Details
Parent link:Advanced Materials Research: Scientific Journal
Vol. 880 : Prospects of Fundamental Sciences Development (PFSD-2013).— 2014.— [P. 237-241]
Main Author: Gradoboev A. V. Aleksandr Vasilyevich
Corporate Authors: Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра естественного научного образования (ЕНО), Национальный исследовательский Томский политехнический университет (ТПУ) Юргинский технологический институт (филиал) (ЮТИ) Кафедра безопасности жизнедеятельности, экологии и физического воспитания (БЖДЭФВ)
Other Authors: Orlova K. N. Kseniya Nikolaevna
Summary:Title screen
Neutron degradation was investigated for AlGaInP light-emitting diodes with wavelengths in the 690 nm region. The process of degradation light output power is shown in three stages. Wattampere, volt-watt and current-voltage characteristic of the light-emitting diodes fabricated on the basis of heterostructures with AlGaInP multiple quantum wells allows to distinguished areas of low, average and strong injection of electrons into the active region of the diodes. Comparison of the research results made of different semiconductor structures suggests that the radiation model of lightemitting diode based on AlGaInP heterostructures with multiple quantum wells is common to all light-emitting diodes under irradiation by fast neutrons, protons, electrons and gamma rays.
Режим доступа: по договору с организацией-держателем ресурса
Published: 2014
Subjects:
электронный ресурс
труды учёных ТПУ
светодиоды
гетероструктуры
квантовые ямы
быстрые нейтроны
LEDs
heterostructures
AlGaInP
quantum wells
fast neutrons
Online Access:http://dx.doi.org/10.4028/www.scientific.net/AMR.880.237
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640413
Description
Summary:Title screen
Neutron degradation was investigated for AlGaInP light-emitting diodes with wavelengths in the 690 nm region. The process of degradation light output power is shown in three stages. Wattampere, volt-watt and current-voltage characteristic of the light-emitting diodes fabricated on the basis of heterostructures with AlGaInP multiple quantum wells allows to distinguished areas of low, average and strong injection of electrons into the active region of the diodes. Comparison of the research results made of different semiconductor structures suggests that the radiation model of lightemitting diode based on AlGaInP heterostructures with multiple quantum wells is common to all light-emitting diodes under irradiation by fast neutrons, protons, electrons and gamma rays.
Режим доступа: по договору с организацией-держателем ресурса
DOI:10.4028/www.scientific.net/AMR.880.237

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