Radiation Model of Light Emitting Diode Based on AlGaInP Heterostructures with Multiple Quantum Wells; Advanced Materials Research; Vol. 880 : Prospects of Fundamental Sciences Development (PFSD-2013)
| Parent link: | Advanced Materials Research: Scientific Journal Vol. 880 : Prospects of Fundamental Sciences Development (PFSD-2013).— 2014.— [P. 237-241] |
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| المؤلف الرئيسي: | |
| مؤلفون مشاركون: | , |
| مؤلفون آخرون: | |
| الملخص: | Title screen Neutron degradation was investigated for AlGaInP light-emitting diodes with wavelengths in the 690 nm region. The process of degradation light output power is shown in three stages. Wattampere, volt-watt and current-voltage characteristic of the light-emitting diodes fabricated on the basis of heterostructures with AlGaInP multiple quantum wells allows to distinguished areas of low, average and strong injection of electrons into the active region of the diodes. Comparison of the research results made of different semiconductor structures suggests that the radiation model of lightemitting diode based on AlGaInP heterostructures with multiple quantum wells is common to all light-emitting diodes under irradiation by fast neutrons, protons, electrons and gamma rays. Режим доступа: по договору с организацией-держателем ресурса |
| اللغة: | الإنجليزية |
| منشور في: |
2014
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://dx.doi.org/10.4028/www.scientific.net/AMR.880.237 |
| التنسيق: | الكتروني فصل الكتاب |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640413 |