The reliability of the power semiconductor module on the operating temperature

The reliability of the power semiconductor module on the operating temperature

Bibliographic Details
Parent link:MATEC Web of Conferences
Vol. 19 : The 2nd International Youth Forum “Smart Grids”, Tomsk, Russia, October 6-10, 2014.— 2014.— [01002, 6 p.]
Main Author: Kravchenko E. V. Evgeny Vladimirovich
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Энергетический институт (ЭНИН) Кафедра автоматизации теплоэнергетических процессов (АТП)
Other Authors: Ivleva D. Yu.
Summary:Title screen
A comparison of the intensities of the failure of a power unit with the real thermal regime of the device under conditions of natural convection and obtained by using statistical data analysis. The integrated assessment of reliability based on the methods of physics failures. The necessity of taking into account the actual non-stationary temperature fields to improve the reliability of the forecast operating life of power semiconductor devices.
Language:English
Published: 2014
Subjects:
электронный ресурс
труды учёных ТПУ
надежность
силовые модули
полупроводниковые модули
температура
питание
тепловые режимы
силовые приборы
полупроводниковые приборы
блоки
Online Access:http://dx.doi.org/10.1051/matecconf/20141901002
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640089

Similar Items

Similar Items