The reliability of the power semiconductor module on the operating temperature

Xehetasun bibliografikoak
Parent link:MATEC Web of Conferences
Vol. 19 : The 2nd International Youth Forum “Smart Grids”, Tomsk, Russia, October 6-10, 2014.— 2014.— [01002, 6 p.]
Egile nagusia: Kravchenko E. V. Evgeny Vladimirovich
Erakunde egilea: Национальный исследовательский Томский политехнический университет (ТПУ) Энергетический институт (ЭНИН) Кафедра автоматизации теплоэнергетических процессов (АТП)
Beste egile batzuk: Ivleva D. Yu.
Gaia:Title screen
A comparison of the intensities of the failure of a power unit with the real thermal regime of the device under conditions of natural convection and obtained by using statistical data analysis. The integrated assessment of reliability based on the methods of physics failures. The necessity of taking into account the actual non-stationary temperature fields to improve the reliability of the forecast operating life of power semiconductor devices.
Hizkuntza:ingelesa
Argitaratua: 2014
Gaiak:
Sarrera elektronikoa:http://dx.doi.org/10.1051/matecconf/20141901002
Formatua: Baliabide elektronikoa Liburu kapitulua
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640089