The reliability of the power semiconductor module on the operating temperature; MATEC Web of Conferences; Vol. 19 : The 2nd International Youth Forum “Smart Grids”, Tomsk, Russia, October 6-10, 2014
| Parent link: | MATEC Web of Conferences Vol. 19 : The 2nd International Youth Forum “Smart Grids”, Tomsk, Russia, October 6-10, 2014.— 2014.— [01002, 6 p.] |
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| मुख्य लेखक: | |
| निगमित लेखक: | |
| अन्य लेखक: | |
| सारांश: | Title screen A comparison of the intensities of the failure of a power unit with the real thermal regime of the device under conditions of natural convection and obtained by using statistical data analysis. The integrated assessment of reliability based on the methods of physics failures. The necessity of taking into account the actual non-stationary temperature fields to improve the reliability of the forecast operating life of power semiconductor devices. |
| भाषा: | अंग्रेज़ी |
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2014
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| ऑनलाइन पहुंच: | http://dx.doi.org/10.1051/matecconf/20141901002 |
| स्वरूप: | इलेक्ट्रोनिक पुस्तक अध्याय |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640089 |
| सारांश: | Title screen A comparison of the intensities of the failure of a power unit with the real thermal regime of the device under conditions of natural convection and obtained by using statistical data analysis. The integrated assessment of reliability based on the methods of physics failures. The necessity of taking into account the actual non-stationary temperature fields to improve the reliability of the forecast operating life of power semiconductor devices. |
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| डिजिटल ऑब्जेक्ट पहचानकर्ता: | 10.1051/matecconf/20141901002 |