The reliability of the power semiconductor module on the operating temperature; MATEC Web of Conferences; Vol. 19 : The 2nd International Youth Forum “Smart Grids”, Tomsk, Russia, October 6-10, 2014
| Parent link: | MATEC Web of Conferences Vol. 19 : The 2nd International Youth Forum “Smart Grids”, Tomsk, Russia, October 6-10, 2014.— 2014.— [01002, 6 p.] |
|---|---|
| Автор: | |
| Співавтор: | |
| Інші автори: | |
| Резюме: | Title screen A comparison of the intensities of the failure of a power unit with the real thermal regime of the device under conditions of natural convection and obtained by using statistical data analysis. The integrated assessment of reliability based on the methods of physics failures. The necessity of taking into account the actual non-stationary temperature fields to improve the reliability of the forecast operating life of power semiconductor devices. |
| Мова: | Англійська |
| Опубліковано: |
2014
|
| Предмети: | |
| Онлайн доступ: | http://dx.doi.org/10.1051/matecconf/20141901002 |
| Формат: | Електронний ресурс Частина з книги |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=640089 |
| Резюме: | Title screen A comparison of the intensities of the failure of a power unit with the real thermal regime of the device under conditions of natural convection and obtained by using statistical data analysis. The integrated assessment of reliability based on the methods of physics failures. The necessity of taking into account the actual non-stationary temperature fields to improve the reliability of the forecast operating life of power semiconductor devices. |
|---|---|
| DOI: | 10.1051/matecconf/20141901002 |