Three types of self-activated luminescence centers in CdS:O; Semiconductors; Vol. 47, iss. 13

Three types of self-activated luminescence centers in CdS:O; Semiconductors; Vol. 47, iss. 13

Opis bibliograficzny
Parent link:	Semiconductors Vol. 47, iss. 13.— 2013.— [P. 1661-1666]
Korporacja:	Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра лазерной и световой техники (ЛиСТ)
Kolejni autorzy:	Morozova N. K., Danilevich N. D., Oleshko V. I. Vladimir Ivanovich, Vil'chinskaya (Vilchinskaya) S. S. Svetlana Sergeevna
Streszczenie:	Title screen The cathodoluminescence and X-ray-luminescence spectra of CdS:O crystals are studied. For these CdS:O crystals the oxygen content, the dependence of the band gap on the substitutional oxygen content [OS], and the band model calculated on the basis of band anticrossing theory are known. New data on the three types of self-activated luminescence, specifically, edge luminescence and luminescence related to SA and F + centers in CdS are obtained. The conditions of the formation of these luminescence centers under changes in the system of intrinsic point defects in CdS crystals containing oxygen are established. Режим доступа: по договору с организацией-держателем ресурса
Język:	angielski
Wydane:	2013
Hasła przedmiotowe:	электронный ресурс труды учёных ТПУ
Dostęp online:	http://dx.doi.org/10.1134/S1063782613130125
Format:	MixedMaterials Elektroniczne Rozdział
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=639593

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