Three types of self-activated luminescence centers in CdS:O; Semiconductors; Vol. 47, iss. 13

Xehetasun bibliografikoak
Parent link:Semiconductors
Vol. 47, iss. 13.— 2013.— [P. 1661-1666]
Erakunde egilea: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра лазерной и световой техники (ЛиСТ)
Beste egile batzuk: Morozova N. K., Danilevich N. D., Oleshko V. I. Vladimir Ivanovich, Vil'chinskaya (Vilchinskaya) S. S. Svetlana Sergeevna
Gaia:Title screen
The cathodoluminescence and X-ray-luminescence spectra of CdS:O crystals are studied. For these CdS:O crystals the oxygen content, the dependence of the band gap on the substitutional oxygen content [OS], and the band model calculated on the basis of band anticrossing theory are known. New data on the three types of self-activated luminescence, specifically, edge luminescence and luminescence related to SA and F + centers in CdS are obtained. The conditions of the formation of these luminescence centers under changes in the system of intrinsic point defects in CdS crystals containing oxygen are established.
Режим доступа: по договору с организацией-держателем ресурса
Hizkuntza:ingelesa
Argitaratua: 2013
Gaiak:
Sarrera elektronikoa:http://dx.doi.org/10.1134/S1063782613130125
Formatua: Baliabide elektronikoa Liburu kapitulua
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=639593