Three types of self-activated luminescence centers in CdS:O

Bibliographic Details
Parent link:Semiconductors
Vol. 47, iss. 13.— 2013.— [P. 1661-1666]
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра лазерной и световой техники (ЛиСТ)
Other Authors: Morozova N. K., Danilevich N. D., Oleshko V. I. Vladimir Ivanovich, Vil'chinskaya (Vilchinskaya) S. S. Svetlana Sergeevna
Summary:Title screen
The cathodoluminescence and X-ray-luminescence spectra of CdS:O crystals are studied. For these CdS:O crystals the oxygen content, the dependence of the band gap on the substitutional oxygen content [OS], and the band model calculated on the basis of band anticrossing theory are known. New data on the three types of self-activated luminescence, specifically, edge luminescence and luminescence related to SA and F + centers in CdS are obtained. The conditions of the formation of these luminescence centers under changes in the system of intrinsic point defects in CdS crystals containing oxygen are established.
Режим доступа: по договору с организацией-держателем ресурса
Published: 2013
Subjects:
Online Access:http://dx.doi.org/10.1134/S1063782613130125
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=639593