Three types of self-activated luminescence centers in CdS:O

Λεπτομέρειες βιβλιογραφικής εγγραφής
Parent link:Semiconductors
Vol. 47, iss. 13.— 2013.— [P. 1661-1666]
Συγγραφή απο Οργανισμό/Αρχή: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра лазерной и световой техники (ЛиСТ)
Άλλοι συγγραφείς: Morozova N. K., Danilevich N. D., Oleshko V. I. Vladimir Ivanovich, Vil'chinskaya (Vilchinskaya) S. S. Svetlana Sergeevna
Περίληψη:Title screen
The cathodoluminescence and X-ray-luminescence spectra of CdS:O crystals are studied. For these CdS:O crystals the oxygen content, the dependence of the band gap on the substitutional oxygen content [OS], and the band model calculated on the basis of band anticrossing theory are known. New data on the three types of self-activated luminescence, specifically, edge luminescence and luminescence related to SA and F + centers in CdS are obtained. The conditions of the formation of these luminescence centers under changes in the system of intrinsic point defects in CdS crystals containing oxygen are established.
Режим доступа: по договору с организацией-держателем ресурса
Γλώσσα:Αγγλικά
Έκδοση: 2013
Θέματα:
Διαθέσιμο Online:http://dx.doi.org/10.1134/S1063782613130125
Μορφή: Ηλεκτρονική πηγή Κεφάλαιο βιβλίου
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=639593