Peculiarities of Angular Distribution of Electrons at Si <100> Channeling; Journal of Physics: Conference Series; Vol. 357, iss. 1: RREPS-2011: Radiation from Relativistic Electrons in Periodic Structures

Peculiarities of Angular Distribution of Electrons at Si <100> Channeling; Journal of Physics: Conference Series; Vol. 357, iss. 1: RREPS-2011: Radiation from Relativistic Electrons in Periodic Structures

Dades bibliogràfiques
Parent link:	Journal of Physics: Conference Series Vol. 357, iss. 1: RREPS-2011: Radiation from Relativistic Electrons in Periodic Structures.— 2012.— [012030, 8 p.]
Autor corporatiu:	Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра теоретической и экспериментальной физики (ТиЭФ), Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра высшей математики и математической физики (ВММФ)
Altres autors:	Bogdanov O. V. Oleg Viktorovich, Pivovarov Yu. L. Yuriy Leonidovich, Takabayashi Y., Tukhfatullin T. A. Timur Ahatovich
Sumari:	Title screen The properties of both angular and spatial distribution of 255 MeV electrons at <100> channeling in silicon crystal has been investigated experimentally at the linac injector of SAGA light source and by computer simulations. The simulation of trajectories, angular and spatial distributions of electrons on the screen monitor has been performed taking into account initial spatial as well as angular beam divergence of electron beam. Both experimental data and simulations show the brilliant effect of so-called "doughnut scattering".
Idioma:	anglès
Publicat:	2012
Matèries:	электронный ресурс труды учёных ТПУ
Accés en línia:	https://doi.org/10.1088/1742-6596/357/1/012030
Format:	Electrònic Capítol de llibre
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=639163

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