Peculiarities of Angular Distribution of Electrons at Si <100> Channeling; Journal of Physics: Conference Series; Vol. 357, iss. 1: RREPS-2011: Radiation from Relativistic Electrons in Periodic Structures

書誌詳細
Parent link:Journal of Physics: Conference Series
Vol. 357, iss. 1: RREPS-2011: Radiation from Relativistic Electrons in Periodic Structures.— 2012.— [012030, 8 p.]
共著者: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра теоретической и экспериментальной физики (ТиЭФ), Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра высшей математики и математической физики (ВММФ)
その他の著者: Bogdanov O. V. Oleg Viktorovich, Pivovarov Yu. L. Yuriy Leonidovich, Takabayashi Y., Tukhfatullin T. A. Timur Ahatovich
要約:Title screen
The properties of both angular and spatial distribution of 255 MeV electrons at <100> channeling in silicon crystal has been investigated experimentally at the linac injector of SAGA light source and by computer simulations. The simulation of trajectories, angular and spatial distributions of electrons on the screen monitor has been performed taking into account initial spatial as well as angular beam divergence of electron beam. Both experimental data and simulations show the brilliant effect of so-called "doughnut scattering".
言語:英語
出版事項: 2012
主題:
オンライン・アクセス:https://doi.org/10.1088/1742-6596/357/1/012030
フォーマット: 電子媒体 図書の章
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=639163