Peculiarities of Angular Distribution of Electrons at Si <100> Channeling; Journal of Physics: Conference Series; Vol. 357, iss. 1: RREPS-2011: Radiation from Relativistic Electrons in Periodic Structures

ग्रंथसूची विवरण
Parent link:Journal of Physics: Conference Series
Vol. 357, iss. 1: RREPS-2011: Radiation from Relativistic Electrons in Periodic Structures.— 2012.— [012030, 8 p.]
निगमित लेखकों: Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра теоретической и экспериментальной физики (ТиЭФ), Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра высшей математики и математической физики (ВММФ)
अन्य लेखक: Bogdanov O. V. Oleg Viktorovich, Pivovarov Yu. L. Yuriy Leonidovich, Takabayashi Y., Tukhfatullin T. A. Timur Ahatovich
सारांश:Title screen
The properties of both angular and spatial distribution of 255 MeV electrons at <100> channeling in silicon crystal has been investigated experimentally at the linac injector of SAGA light source and by computer simulations. The simulation of trajectories, angular and spatial distributions of electrons on the screen monitor has been performed taking into account initial spatial as well as angular beam divergence of electron beam. Both experimental data and simulations show the brilliant effect of so-called "doughnut scattering".
भाषा:अंग्रेज़ी
प्रकाशित: 2012
विषय:
ऑनलाइन पहुंच:https://doi.org/10.1088/1742-6596/357/1/012030
स्वरूप: इलेक्ट्रोनिक पुस्तक अध्याय
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=639163