Features of silicon-containing coatings deposition from ablation plasma formed by a powerful ion beam
| Parent link: | Journal of Physics: Conference Series Vol. 552 : International Congress on Energy Fluxes and Radiation Effects (EFRE-2014), 21–26 September 2014, Tomsk, Russia.— 2014.— [012025, 7 p.] |
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| Other Authors: | , , , , |
| Summary: | Title screen This paper presents the research of features of silicon-containing coatings deposition from ablation plasma, which is formed by a powerful ion beam at the influence on a microsized pressed powder of SiO[2]. Experimental research have been conducted with a laboratory setup based on a TEMP-4M pulsed ion accelerator in a double-pulse forming mode; the first is negative (300-500 ns, 100-150 kV), and the second is positive (150 ns, 250-300 kV). A beam composition: C+ ions (60-70 %) and protons, the ion current density on the target is 25±5 A/cm{2}. An electron self-magnetically insulated diode has been used to generate the ion beam in the TEMP-4M accelerator. The properties of obtained silicon-containing films have been analyzed with the help of IR spectroscopy. A surface structure has been studied by the method of scanning electron microscopy. Режим доступа: по договору с организацией-держателем ресурса |
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2014
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| Online Access: | http://iopscience.iop.org/1742-6596/552/1/012025 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=639161 |