Secondary electron emission induced by channeled relativistic electrons in a (1 1 0) Si crystal

Secondary electron emission induced by channeled relativistic electrons in a (1 1 0) Si crystal

Bibliographic Details
Parent link:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms: Scientific Journal Vol. 276.— 2012.— [P. 14–18]
Main Author:	Korotchenko K. B. Konstantin Borisovich
Corporate Authors:	Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра теоретической и экспериментальной физики (ТиЭФ), Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра высшей математики и математической физики (ВММФ)
Other Authors:	Kunashenko Yu. P. Yuriy Petrovich, Tukhfatullin T. A. Timur Ahatovich
Summary:	Title screen A new effect that accompanies electrons channeled in a crystal is considered. This phenomenon was previously predicted was called channeling secondary electron emission (CSEE). The exact CSEE cross-section on the basis of using the exact Bloch wave function of electron channeled in a crystal is obtained. The detailed investigation of CSEE cross-section is performed. It is shown that angular distribution of electrons emitted due to CSEE has a complex form. Режим доступа: по договору с организацией-держателем ресурса
Published:	2012
Subjects:	электронный ресурс труды учёных ТПУ
Online Access:	http://www.sciencedirect.com/science/article/pii/S0168583X12000213
Format:	Electronic Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=639100

Internet

http://www.sciencedirect.com/science/article/pii/S0168583X12000213