Total yield of channeling radiation from relativistic electrons in thin Si and W crystals; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 309

Total yield of channeling radiation from relativistic electrons in thin Si and W crystals

Bibliografiske detaljer
Parent link:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms: Scientific Journal Vol. 309.— 2013.— [P. 59–62]
Corporate Authors:	Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра теоретической и экспериментальной физики (ТиЭФ), Национальный исследовательский Томский политехнический университет (ТПУ) Физико-технический институт (ФТИ) Кафедра высшей математики и математической физики (ВММФ)
Andre forfattere:	Abdrachitov S. V. Sergey Vladimirovich, Bogdanov O. V. Oleg Viktorovich, Dabagov S. B., Pivovarov Yu. L. Yuriy Leonidovich, Tukhfatullin T. A. Timur Ahatovich
Summary:	Title screen Orientation dependences of channeling radiation total yield from relativistic 155-855 MeV electrons at both 〈1 0 0〉 axial and (1 0 0) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam. Режим доступа: по договору с организацией-держателем ресурса
Sprog:	engelsk
Udgivet:	2013
Fag:	электронный ресурс труды учёных ТПУ
Online adgang:	http://www.sciencedirect.com/science/article/pii/S0168583X13002619
Format:	Electronisk Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=639098

Internet

http://www.sciencedirect.com/science/article/pii/S0168583X13002619