Total yield of channeling radiation from relativistic electrons in thin Si and W crystals; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 309
| Parent link: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms: Scientific Journal Vol. 309.— 2013.— [P. 59–62] |
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| সংস্থা লেখক: | , |
| অন্যান্য লেখক: | , , , , |
| সংক্ষিপ্ত: | Title screen Orientation dependences of channeling radiation total yield from relativistic 155-855 MeV electrons at both 〈1 0 0〉 axial and (1 0 0) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam. Режим доступа: по договору с организацией-держателем ресурса |
| ভাষা: | ইংরেজি |
| প্রকাশিত: |
2013
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| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | http://www.sciencedirect.com/science/article/pii/S0168583X13002619 |
| বিন্যাস: | বৈদ্যুতিক গ্রন্থের অধ্যায় |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=639098 |