Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation; Journal of Physics: Conference Series; Vol. 552: International Congress on Energy Fluxes and Radiation Effects (EFRE-2014), 21–26 September 2014, Tomsk, Russia
| Parent link: | Journal of Physics: Conference Series Vol. 552: International Congress on Energy Fluxes and Radiation Effects (EFRE-2014), 21–26 September 2014, Tomsk, Russia.— 2014.— [012003, 5 p.] |
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| مؤلفون آخرون: | , , , |
| الملخص: | Title screen Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10-2Pa, 300–1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism andthe type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed. Режим доступа: по договору с организацией-держателем ресурса |
| اللغة: | الإنجليزية |
| منشور في: |
2014
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://iopscience.iop.org/1742-6596/552/1/012003 |
| التنسيق: | الكتروني فصل الكتاب |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637936 |
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| 200 | 1 | |a Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation |f A. V. Kabyshev [et al.] | |
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| 300 | |a Title screen | ||
| 320 | |a [References: 15 tit.] | ||
| 330 | |a Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10-2Pa, 300–1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism andthe type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | 0 | |0 (RuTPU)RU\TPU\network\3526 |t Journal of Physics: Conference Series | |
| 463 | 0 | |0 (RuTPU)RU\TPU\network\3527 |t Vol. 552: International Congress on Energy Fluxes and Radiation Effects (EFRE-2014), 21–26 September 2014, Tomsk, Russia |v [012003, 5 p.] |d 2014 | |
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