Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation

Bibliographic Details
Parent link:	Journal of Physics: Conference Series Vol. 552: International Congress on Energy Fluxes and Radiation Effects (EFRE-2014), 21–26 September 2014, Tomsk, Russia.— 2014.— [012003, 5 p.]
Other Authors:	Kabyshev A. V. Alexander Vasilievich, Konusov F. V. Fedor Valerievich, Remnev G. E. Gennady Efimovich, Pavlov S. K. Sergey Konstantinovich
Summary:	Title screen Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10-2Pa, 300–1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism andthe type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed. Режим доступа: по договору с организацией-держателем ресурса
Published:	2014
Subjects:	электронный ресурс труды учёных ТПУ арсенид галлия пленки поликристаллический кремний абляция
Online Access:	http://iopscience.iop.org/1742-6596/552/1/012003
Format:	Electronic Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637936

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