Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation; Journal of Physics: Conference Series; Vol. 552: International Congress on Energy Fluxes and Radiation Effects (EFRE-2014), 21–26 September 2014, Tomsk, Russia
| Источник: | Journal of Physics: Conference Series Vol. 552: International Congress on Energy Fluxes and Radiation Effects (EFRE-2014), 21–26 September 2014, Tomsk, Russia.— 2014.— [012003, 5 p.] |
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| Другие авторы: | , , , |
| Примечания: | Title screen Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10-2Pa, 300–1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism andthe type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed. Режим доступа: по договору с организацией-держателем ресурса |
| Язык: | английский |
| Опубликовано: |
2014
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| Предметы: | |
| Online-ссылка: | http://iopscience.iop.org/1742-6596/552/1/012003 |
| Формат: | Электронный ресурс Статья |
| Запись в KOHA: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637936 |