Nonstoichiometric reactions producing ceramic pigments

Bibliographic Details
Parent link:Glass and Ceramics
Vol. 68, iss. 3-4.— 2011.— [P. 76-79]
Main Author: Sedelnikova M. B. Mariya Borisovna
Corporate Author: Национальный исследовательский Томский политехнический университет (ТПУ) Институт физики высоких технологий (ИФВТ) Кафедра общей и неорганической химии (ОНХ)
Other Authors: Pogrebenkov V. M. Valeriy Matveevich, Liseenko N. V. Natalya Vladimirovna, Gorbatenko V. V. Victoria Valerievna
Summary:Title screen
Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10–2 Pa, 300–1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed
Режим доступа: по договору с организацией-держателем ресурса
Published: 2011
Subjects:
Online Access:http://link.springer.com/article/10.1007/s10717-011-9325-9
Format: Electronic Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637369