The Synthesis of Gallium Arsenide Films on Silicon Substrate by Ionics Ablation; Известия вузов. Физика; Т. 55, № 12-2
| Parent link: | Известия вузов. Физика: научный журнал.— , 1957- Т. 55, № 12-2.— 2012.— [С. 128-132] |
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| Hlavní autor: | |
| Korporace: | , , |
| Další autoři: | , |
| Shrnutí: | Title screen Optical, electrophysical and photoelectrical properties of arsenide gallium thin films deposited on the polycrystalline silicon by pulsed ions ablation with using of power ions bunch were investigated. The influence of the vacuum annealing at temperature 300-900 K and residual pressure 10 -2 Pa on the films characteristics of the surface and volume dark conduction and photoconduction was established. The optimal deposition and thermal vacuum treatment conditions at which the films properties changes are more stable to thermal and field excitation were determined. The deposited films don't subject on the characteristics to films produced by the other pulsed and epitaxy methods and surpass the films deposited on dielectrics. The analysis of properties confirms a presence in the films as soon as crystal and the amorphous components. The predominant factor in the films properties forming is a defects formation, a defects clusterization and a change in the distribution of the nanocrystals. A films deposited in the center of plasma flame possesses an optimal properties. The silicon substrate effect reflects on films characteristics until and after their annealing. Режим доступа: по договору с организацией-держателем ресурса |
| Jazyk: | angličtina |
| Vydáno: |
2012
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| Témata: | |
| On-line přístup: | http://elibrary.ru/item.asp?id=20133326 |
| Médium: | Elektronický zdroj Kapitola |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637364 |
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| 200 | 1 | |a The Synthesis of Gallium Arsenide Films on Silicon Substrate by Ionics Ablation |f A. V. Kabyshev, F. V. Konusov, G. E. Remnev | |
| 203 | |a Text |c electronic | ||
| 300 | |a Title screen | ||
| 330 | |a Optical, electrophysical and photoelectrical properties of arsenide gallium thin films deposited on the polycrystalline silicon by pulsed ions ablation with using of power ions bunch were investigated. The influence of the vacuum annealing at temperature 300-900 K and residual pressure 10 -2 Pa on the films characteristics of the surface and volume dark conduction and photoconduction was established. The optimal deposition and thermal vacuum treatment conditions at which the films properties changes are more stable to thermal and field excitation were determined. The deposited films don't subject on the characteristics to films produced by the other pulsed and epitaxy methods and surpass the films deposited on dielectrics. The analysis of properties confirms a presence in the films as soon as crystal and the amorphous components. The predominant factor in the films properties forming is a defects formation, a defects clusterization and a change in the distribution of the nanocrystals. A films deposited in the center of plasma flame possesses an optimal properties. The silicon substrate effect reflects on films characteristics until and after their annealing. | ||
| 333 | |a Режим доступа: по договору с организацией-держателем ресурса | ||
| 461 | |t Известия вузов. Физика |o научный журнал |d 1957- | ||
| 463 | |t Т. 55, № 12-2 |v [С. 128-132] |d 2012 | ||
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| 700 | 1 | |a Kabyshev |b A. V. |c specialist in the field of electric power engineering |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences |f 1958- |g Alexander Vasilievich |3 (RuTPU)RU\TPU\pers\32572 | |
| 701 | 1 | |a Konusov |b F. V. |c physicist |c Lead Engineer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences |f 1958- |g Fedor Valerievich |3 (RuTPU)RU\TPU\pers\32570 |9 16491 | |
| 701 | 1 | |a Remnev |b G. E. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of technical sciences |f 1948- |g Gennady Efimovich |3 (RuTPU)RU\TPU\pers\31500 | |
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