The Synthesis of Gallium Arsenide Films on Silicon Substrate by Ionics Ablation
| Parent link: | Известия вузов. Физика: научный журнал.— , 1957- Т. 55, № 12-2.— 2012.— [С. 128-132] |
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| Summary: | Title screen Optical, electrophysical and photoelectrical properties of arsenide gallium thin films deposited on the polycrystalline silicon by pulsed ions ablation with using of power ions bunch were investigated. The influence of the vacuum annealing at temperature 300-900 K and residual pressure 10 -2 Pa on the films characteristics of the surface and volume dark conduction and photoconduction was established. The optimal deposition and thermal vacuum treatment conditions at which the films properties changes are more stable to thermal and field excitation were determined. The deposited films don't subject on the characteristics to films produced by the other pulsed and epitaxy methods and surpass the films deposited on dielectrics. The analysis of properties confirms a presence in the films as soon as crystal and the amorphous components. The predominant factor in the films properties forming is a defects formation, a defects clusterization and a change in the distribution of the nanocrystals. A films deposited in the center of plasma flame possesses an optimal properties. The silicon substrate effect reflects on films characteristics until and after their annealing. Режим доступа: по договору с организацией-держателем ресурса |
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2012
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| Online Access: | http://elibrary.ru/item.asp?id=20133326 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=637364 |