Parametric x radiation from thick crystals

Parametric x radiation from thick crystals

Podrobná bibliografie
Parent link:	Physical Review E: Scientific Journal Vol. 51, Iss. 6.— 1995.— [P. 6305- 6308]
Další autoři:	Endo I., Harada M., Kobayashi T., Lee Y. S., Ohgaki T., Takahashi T., Muto M., Yoshida K., Nitta H., Ohba Т., Zabaev V. N. Viktor Nikolaevich, Potylitsyn A. P. Alexander Petrovich
Shrnutí:	Title screen The parametric x radiation from thick Si single crystals with 0.5–5 mm thickness was investigated at an electron energy of 900 MeV. As the crystal thickness increased, both intensity and angular spread reached a plateau after their increase in the thin crystal region, resulting in more brilliant x rays than Feranchuk and Ivashin’s prediction [J. Phys. (Paris) 46, 1981 (1985)] for thick crystals. This behavior is consistent with the incoherent model proposed in our previous paper [Phys. Rev. Lett. 70, 3247 (1993)] Режим доступа: по договору с организацией-держателем ресурса
Jazyk:	angličtina
Vydáno:	1995
Témata:	электронный ресурс труды учёных ТПУ
On-line přístup:	http://dx.doi.org/10.1103/PhysRevE.51.6305
Médium:	Elektronický zdroj Kapitola
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=636812

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