Parametric x radiation from thick crystals

Bibliographic Details
Parent link:	Physical Review E: Scientific Journal Vol. 51, Iss. 6.— 1995.— [P. 6305- 6308]
Other Authors:	Endo I., Harada M., Kobayashi T., Lee Y. S., Ohgaki T., Takahashi T., Muto M., Yoshida K., Nitta H., Ohba Т., Zabaev V. N. Viktor Nikolaevich, Potylitsyn A. P. Alexander Petrovich
Summary:	Title screen The parametric x radiation from thick Si single crystals with 0.5–5 mm thickness was investigated at an electron energy of 900 MeV. As the crystal thickness increased, both intensity and angular spread reached a plateau after their increase in the thin crystal region, resulting in more brilliant x rays than Feranchuk and Ivashin’s prediction [J. Phys. (Paris) 46, 1981 (1985)] for thick crystals. This behavior is consistent with the incoherent model proposed in our previous paper [Phys. Rev. Lett. 70, 3247 (1993)] Режим доступа: по договору с организацией-держателем ресурса
Published:	1995
Subjects:	электронный ресурс труды учёных ТПУ
Online Access:	http://dx.doi.org/10.1103/PhysRevE.51.6305
Format:	Electronic Book Chapter
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=636812

Description
Summary:	Title screen The parametric x radiation from thick Si single crystals with 0.5–5 mm thickness was investigated at an electron energy of 900 MeV. As the crystal thickness increased, both intensity and angular spread reached a plateau after their increase in the thin crystal region, resulting in more brilliant x rays than Feranchuk and Ivashin’s prediction [J. Phys. (Paris) 46, 1981 (1985)] for thick crystals. This behavior is consistent with the incoherent model proposed in our previous paper [Phys. Rev. Lett. 70, 3247 (1993)] Режим доступа: по договору с организацией-держателем ресурса
DOI:	10.1103/PhysRevE.51.6305

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