Влияние подслоя углерода и титана на электрофизические характеристики пленки нитрида алюминия на кремнии
| Parent link: | Перспективы развития фундаментальных наук=Prospects of Fundamental Sciences Development: сборник научных трудов XIV Международной конференции студентов, аспирантов и молодых ученых, г. Томск, 25-28 апреля 2017 г./ Национальный исследовательский Томский политехнический университет (ТПУ) ; под ред. И. А. Курзиной, Г. А. Вороновой.— , 2017 Т. 1 : Физика.— 2017.— [С. 141-143] |
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| Corporate Authors: | , |
| Other Authors: | , , |
| Summary: | Заглавие с экрана The carbon (C) and titanium (Ti) ions were implanted onto the surface of the silicon (Si), and the thin films of aluminum nitride (AlN) were prepared on Si(100) substrate by magnetron sputtering after the implantations. The compositions of these thin film systems were studied by optical microscopy and Raman spectroscopy, and the surface conductivity of those samples were measured. It was indicated that the implanted C and Ti ions did have made a difference to the electro physical properties of the systems AlN/Si. |
| Language: | Russian |
| Published: |
2017
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| Online Access: | http://earchive.tpu.ru/handle/11683/41436 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=622666 |