Определение оптимальной компоновки активной зоны реактора ИРТ-Т для достижения эффективного облучения слитков кремния большого диаметра
| Parent link: | Перспективы развития фундаментальных наук=Prospects of Fundamental Sciences Development: сборник научных трудов XIV Международной конференции студентов, аспирантов и молодых ученых, г. Томск, 25-28 апреля 2017 г./ Национальный исследовательский Томский политехнический университет (ТПУ) ; под ред. И. А. Курзиной, Г. А. Вороновой.— , 2017 Т. 1 : Физика.— 2017.— [С. 102-104] |
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| Summary: | Заглавие с экрана In this paper, we examined the main trends in world demand for semiconductor materials. Taking into account the considered trends, at the initial stage a model of a new experimental irradiation volume was constructed, which will allow to obtain ingots of a semiconductor material up to 200 mm in size with high doping accuracy. The next step was to determine the regularities of the FA location in the core, in order to obtain the conditions for the maximum effective flow of NTD in the new experimental channel. In addition, an assessment was made of the influence of regulatory authorities on the course of NTD. |
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2017
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| Online Access: | http://earchive.tpu.ru/handle/11683/41427 |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=622657 |