Распределение примесных ионов в поверхностных слоях диэлектриков, модифицированных ионными пучками; Перспективы развития фундаментальных наук
| Parent link: | Перспективы развития фундаментальных наук.— 2015.— [С. 206-208] |
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| Údar corparáideach: | |
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| Achoimre: | Заглавие с экрана The results of studies of impurity ions distribution in surface layers of dielectric modified by ion beams are presented. Depth profiles were measured by secondary ion mass spectrometry method. Computer simulations of the expected ion depth profile were carried out using the TRIM program. The alumina ceramic implanted with Ti ions at energy 50 keV and zirconium ceramic implanted with Al ions at energy 78 keV were investigated in our work. |
| Teanga: | Rúisis |
| Foilsithe / Cruthaithe: |
2015
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| Sraith: | Физика |
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| Rochtain ar líne: | http://earchive.tpu.ru/handle/11683/19147 http://www.lib.tpu.ru/fulltext/c/2015/C21/058.pdf |
| Formáid: | Leictreonach Caibidil leabhair |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=612960 |
| Cur síos fisiciúil: | 1 файл(577 Кб) |
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| Achoimre: | Заглавие с экрана The results of studies of impurity ions distribution in surface layers of dielectric modified by ion beams are presented. Depth profiles were measured by secondary ion mass spectrometry method. Computer simulations of the expected ion depth profile were carried out using the TRIM program. The alumina ceramic implanted with Ti ions at energy 50 keV and zirconium ceramic implanted with Al ions at energy 78 keV were investigated in our work. |