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| LEADER |
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20250314162704.0 |
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|a (RuTPU)RU\TPU\tpu\21988
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| 035 |
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|a RU\TPU\tpu\21987
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| 090 |
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|a 598357
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| 100 |
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|a 20121109d1988 k||y0rusy50 ba
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| 101 |
0 |
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|a eng
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| 102 |
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|a US
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| 200 |
1 |
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|a Decrease of imperfection of GaAs epitaxial structures improvement of electrophysical and spectrometrical characteristics of silicon detectors under positron irradiation
|f P. V. Kuznetsov [et al.]
|
| 320 |
|
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|a References: 2 tit.
|
| 333 |
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|a В фонде НТБ ТПУ отсутствует
|
| 461 |
|
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|t Radiation effects express
|d 1987-1989
|
| 463 |
|
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|t Vol. 1, iss. 6
|v P. 259-262
|d 1988
|
| 610 |
1 |
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|a труды учёных ТПУ
|
| 701 |
|
1 |
|a Kuznetsov
|b P. V.
|
| 701 |
|
1 |
|a Arefyev (Afef'ev, Arefiev)
|b K. P.
|c physicist
|c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences
|c A Corresponding Member of Russian Academy of Natural Sciences (RANS/RAEN)
|f 1947-
|g Konstantin Petrovich
|3 (RuTPU)RU\TPU\pers\29714
|4 070
|9 14208
|
| 701 |
|
1 |
|a Sokhoreva
|b V. V.
|
| 701 |
|
1 |
|a Vorobiev
|b S. A.
|
| 801 |
|
1 |
|a RU
|b 63413507
|c 20121109
|
| 801 |
|
2 |
|a RU
|b 63413507
|c 20121109
|g RCR
|
| 942 |
|
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|c CR
|
