Decrease of imperfection of GaAs epitaxial structures improvement of electrophysical and spectrometrical characteristics of silicon detectors under positron irradiation

Bibliographic Details
Parent link:Radiation effects express.— , 1987-1989
Vol. 1, iss. 6.— 1988.— P. 259-262
Other Authors: Kuznetsov P. V., Arefyev (Afef'ev, Arefiev) K. P. Konstantin Petrovich, Sokhoreva V. V., Vorobiev S. A.
Summary:В фонде НТБ ТПУ отсутствует
Language:English
Published: 1988
Subjects:
Format: Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=598357