Kuznetsov P. V., Arefyev K. P. Konstantin Petrovich, Sokhoreva V. V., & Vorobiev S. A. (1988). Decrease of imperfection of GaAs epitaxial structures improvement of electrophysical and spectrometrical characteristics of silicon detectors under positron irradiation. 1988.
Citace podle Chicago (17th ed.)Kuznetsov P. V., Arefyev K. P. Konstantin Petrovich, Sokhoreva V. V., a Vorobiev S. A. Decrease of Imperfection of GaAs Epitaxial Structures Improvement of Electrophysical and Spectrometrical Characteristics of Silicon Detectors Under Positron Irradiation. 1988, 1988.
Citace podle MLA (9th ed.)Kuznetsov P. V., et al. Decrease of Imperfection of GaAs Epitaxial Structures Improvement of Electrophysical and Spectrometrical Characteristics of Silicon Detectors Under Positron Irradiation. 1988, 1988.