Physical basis for high-power semiconductor nanosecond opening switches; IEEE Transactions on Plasma Science; Vol. 28, № 5

Physical basis for high-power semiconductor nanosecond opening switches

Detalles Bibliográficos
Parent link:	IEEE Transactions on Plasma Science Vol. 28, № 5.— 2000.— P. 1540-1544
Autor principal:	Grekhov I. V.
Otros Autores:	Mesyats G. A. Gennady Andreyevich
Sumario:	В фонде НТБ ТПУ отсутствует
Lenguaje:	inglés
Publicado:	2000
Materias:	труды учёных ТПУ
Formato:	Capítulo de libro
KOHA link:	https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=596730

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