Physical basis for high-power semiconductor nanosecond opening switches; IEEE Transactions on Plasma Science; Vol. 28, № 5
| Parent link: | IEEE Transactions on Plasma Science Vol. 28, № 5.— 2000.— P. 1540-1544 |
|---|---|
| मुख्य लेखक: | Grekhov I. V. |
| अन्य लेखक: | Mesyats G. A. Gennady Andreyevich |
| सारांश: | В фонде НТБ ТПУ отсутствует |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
2000
|
| विषय: | |
| स्वरूप: | पुस्तक अध्याय |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=596730 |
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समान संसाधन
-
Physical basis for high power semiconductor nanosecond opening switches; The 12th IEEE International Pulsed Power Conference, Monterey, CA, june 27-30, 1999; Vol. 2
द्वारा: Grekhov I. V.
प्रकाशित: (1999) -
Nanosecond semiconductor diodes for pulsed power switching; Physics-Uspekhi; Vol. 48, № 7
द्वारा: Grekhov I. V.
प्रकाशित: (2005) -
Microsecond plasma opening switches; IEEE Transactions on Plasma Science; Vol. 15, № 6
द्वारा: Mesyats G. A. Gennady Andreyevich
प्रकाशित: (1987) -
A terawatt pulse-power generator with a microsecond plasma-opening switch; IEEE Transactions on Plasma Science; Vol. 18 , iss. 1
प्रकाशित: (1990) -
High-Current Vacuum Arc Shunted by a Semiconductor Switch on Kiloampere Current Interruption; IEEE Transactions on Plasma Science; Vol. 44, iss. 7
प्रकाशित: (2016)