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|a 596730
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|a 20110816d2000 k||y0rusy50 ba
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|a eng
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| 102 |
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|a US
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| 200 |
1 |
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|a Physical basis for high-power semiconductor nanosecond opening switches
|f I. V. Grekhov, G. A. Mesyats
|
| 333 |
|
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|a В фонде НТБ ТПУ отсутствует
|
| 461 |
|
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|t IEEE Transactions on Plasma Science
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| 463 |
|
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|t Vol. 28, № 5
|v P. 1540-1544
|d 2000
|
| 610 |
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|
|a труды учёных ТПУ
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| 700 |
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1 |
|a Grekhov
|b I. V.
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| 701 |
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1 |
|a Mesyats
|b G. A.
|c russian physicist
|c academican, vice-president of RAS
|c graduate of Tomsk Polytechnic Institute
|f 1936-
|g Gennady Andreyevich
|3 (RuTPU)RU\TPU\pers\28088
|4 070
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|b 63413507
|c 20110816
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|c CR
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