Grekhov I. V. & Mesyats G. A. Gennady Andreyevich. (2000). Physical basis for high-power semiconductor nanosecond opening switches. 2000.
Chicago Style (17th ed.) CitationGrekhov I. V. and Mesyats G. A. Gennady Andreyevich. Physical Basis for High-power Semiconductor Nanosecond Opening Switches. 2000, 2000.
MLA (9th ed.) CitationGrekhov I. V. and Mesyats G. A. Gennady Andreyevich. Physical Basis for High-power Semiconductor Nanosecond Opening Switches. 2000, 2000.
Warning: These citations may not always be 100% accurate.