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Channeling of 20-35 MeV electrons in Si substrates of multilayer structures

Channeling of 20-35 MeV electrons in Si substrates of multilayer structures

Detalhes bibliográficos
Parent link:RReps'11. Radiation from Relativistic Electrons in Periodic Structures.— 2011.— С. 91
Autor principal: Kaplin V. V. Valeriy Viktorovich
Outros Autores: Uglov S. R. Sergey Romanovich
Idioma:inglês
Publicado em: 2011
Assuntos:
труды учёных ТПУ
электроны
каналирование
кремний
подложки
многослойные структуры
Formato: Capítulo de Livro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=245075
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