High-frequency short-pulsed bias source for the ion-plasma material treatment

Bibliographic Details
Parent link:10th International Conference on Modification of Materials with Particle Beams and Plasma Flows, Tomsk, 19-24 September 2010: proceedings/ Tomsk Polytechnic University (TPU) ; Institute of High Current Electronics SB RAS ; High voltage research institute Tomsk Polytechnic University ; Nuclear Physics institute Tomsk Polytechnic University. P. 67-68.— , 2010.— 978-5-94458-112-9
Main Author: Ryabchikov A. I. Aleksandr Ilyich
Other Authors: Tolmachev V. I.
Summary:The high-frequency short-pulsed bias voltage generator for the ion-plasma materialtreatment is described in the paper. The generator provides pulsed negative bias on the load with the frequency of 100 kHz. Pulse duration is adjusted discretely within 1-9 μs, with a step of 1 μs. The output pulse amplitude is adjusted stepwise from 1000 to 5000 V. The maximum current in the load is 10 A. In case of work on a non-conductive sample, a discharge switch removing the charge from the sample is provided
Language:English
Published: 2010
Subjects:
Format: Book Chapter
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=239574

MARC

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200 1 |a High-frequency short-pulsed bias source for the ion-plasma material treatment  |f A. I. Ryabchikov, V. I. Tolmachev 
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330 |a The high-frequency short-pulsed bias voltage generator for the ion-plasma materialtreatment is described in the paper. The generator provides pulsed negative bias on the load with the frequency of 100 kHz. Pulse duration is adjusted discretely within 1-9 μs, with a step of 1 μs. The output pulse amplitude is adjusted stepwise from 1000 to 5000 V. The maximum current in the load is 10 A. In case of work on a non-conductive sample, a discharge switch removing the charge from the sample is provided 
463 1 |0 (RuTPU)RU\TPU\book\229499  |y 978-5-94458-112-9  |t 10th International Conference on Modification of Materials with Particle Beams and Plasma Flows, Tomsk, 19-24 September 2010  |o proceedings  |f Tomsk Polytechnic University (TPU) ; Institute of High Current Electronics SB RAS ; High voltage research institute Tomsk Polytechnic University ; Nuclear Physics institute Tomsk Polytechnic University  |v P. 67-68  |d 2010  |p 782 p. 
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700 1 |a Ryabchikov  |b A. I.  |c Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences  |c physicist  |f 1950-  |g Aleksandr Ilyich  |2 stltpush  |3 (RuTPU)RU\TPU\pers\30912 
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