Получение меза-структур методом реактивного ионно-плазменного травления; Перспективы развития фундаментальных наук

Bibliografski detalji
Parent link:Перспективы развития фундаментальных наук.— 2012.— [С. 257-259]
Glavni autor: Ходыревская Ю. И.
Daljnji autori: Романенко С. Е. Сергей Евгеньевич (научный руководитель)
Sažetak:Заглавие с экрана
This report is devoted to obtaining deep profiles in the crystal of silicon carbide. detail the sequence of different stages of the experiment. Also the influence of the parameters, in which the etching takes place, on various facets of the crystal was studied. In addition, the dependence of one of the main etching parameters, such as etching rate, on the pressure of the plasma was obtained.
Jezik:ruski
Izdano: 2012
Serija:Физика
Teme:
Online pristup:http://www.lib.tpu.ru/fulltext/c/2012/C21/083.pdf
Format: Elektronički Poglavlje knjige
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=237494

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