Получение меза-структур методом реактивного ионно-плазменного травления; Перспективы развития фундаментальных наук
| Parent link: | Перспективы развития фундаментальных наук.— 2012.— [С. 257-259] |
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| Other Authors: | |
| Summary: | Заглавие с экрана This report is devoted to obtaining deep profiles in the crystal of silicon carbide. detail the sequence of different stages of the experiment. Also the influence of the parameters, in which the etching takes place, on various facets of the crystal was studied. In addition, the dependence of one of the main etching parameters, such as etching rate, on the pressure of the plasma was obtained. |
| Language: | Russian |
| Published: |
2012
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| Series: | Физика |
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| Online Access: | http://www.lib.tpu.ru/fulltext/c/2012/C21/083.pdf |
| Format: | Electronic Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=237494 |
| Physical Description: | 1 файл(360 Кб) |
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| Summary: | Заглавие с экрана This report is devoted to obtaining deep profiles in the crystal of silicon carbide. detail the sequence of different stages of the experiment. Also the influence of the parameters, in which the etching takes place, on various facets of the crystal was studied. In addition, the dependence of one of the main etching parameters, such as etching rate, on the pressure of the plasma was obtained. |