A Cathode Unit for High-Dose Implantation of Semiconductor Materials; 7 International conference on modification of materials with particle beams and plasma flows

A Cathode Unit for High-Dose Implantation of Semiconductor Materials; 7 International conference on modification of materials with particle beams and plasma flows

Detalles Bibliográficos
Parent link:7 International conference on modification of materials with particle beams and plasma flows.— 2004.— [P. 49-50]
Autor Principal: Gricenko (Gritsenko) B. P. Boris Petrovich
Outros autores: Bespalov V. V. Viktor Vladimirovich
Summary:Title from the title-page.
The implantation of semiconductor materials in metals and alloys essentially extends the capabilities of modifying their superficial properties. However, the use of silicon or other semiconductor materials as a cathode in the existing designs of ion sources is complicated because of their low electric conductivity. The purpose of the given work was the development of a cathodic unit of an ion source where not only metals but also nonmetallic materials can be used as cathode materials to increase the stability of arc-firing and burning.
Режим доступа: из корпоративной сети ТПУ
Text files
Idioma:inglés
Publicado: 2004
Series:Beam and plasma sources
Subjects:
физика
плазма
полупроводниковые материалы
катодные узлы
ионные источники
высокодозная имплантация
катодные материалы
труды учёных ТПУ
электронный ресурс
Acceso en liña:http://www.lib.tpu.ru/fulltext2/c/2004/C13/033.pdf
Formato: Electrónico Capítulo de libro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=231965

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