A Cathode Unit for High-Dose Implantation of Semiconductor Materials; 7 International conference on modification of materials with particle beams and plasma flows

Manylion Llyfryddiaeth
Parent link:7 International conference on modification of materials with particle beams and plasma flows.— 2004.— [P. 49-50]
Prif Awdur: Gricenko (Gritsenko) B. P. Boris Petrovich
Awduron Eraill: Bespalov V. V. Viktor Vladimirovich
Crynodeb:Title from the title-page.
The implantation of semiconductor materials in metals and alloys essentially extends the capabilities of modifying their superficial properties. However, the use of silicon or other semiconductor materials as a cathode in the existing designs of ion sources is complicated because of their low electric conductivity. The purpose of the given work was the development of a cathodic unit of an ion source where not only metals but also nonmetallic materials can be used as cathode materials to increase the stability of arc-firing and burning.
Режим доступа: из корпоративной сети ТПУ
Text files
Iaith:Saesneg
Cyhoeddwyd: 2004
Cyfres:Beam and plasma sources
Pynciau:
Mynediad Ar-lein:http://www.lib.tpu.ru/fulltext2/c/2004/C13/033.pdf
Fformat: Electronig Pennod Llyfr
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=231965

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