A Cathode Unit for High-Dose Implantation of Semiconductor Materials; 7 International conference on modification of materials with particle beams and plasma flows
| Parent link: | 7 International conference on modification of materials with particle beams and plasma flows.— 2004.— [P. 49-50] |
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| Sažetak: | Title from the title-page. The implantation of semiconductor materials in metals and alloys essentially extends the capabilities of modifying their superficial properties. However, the use of silicon or other semiconductor materials as a cathode in the existing designs of ion sources is complicated because of their low electric conductivity. The purpose of the given work was the development of a cathodic unit of an ion source where not only metals but also nonmetallic materials can be used as cathode materials to increase the stability of arc-firing and burning. Режим доступа: из корпоративной сети ТПУ Text files |
| Jezik: | engleski |
| Izdano: |
2004
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| Serija: | Beam and plasma sources |
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| Online pristup: | http://www.lib.tpu.ru/fulltext2/c/2004/C13/033.pdf |
| Format: | Elektronički Poglavlje knjige |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=231965 |