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    Numerical Simulation of Temperature Field Dynamics in Single-Crystal Silicon at Repetitively-Pulsed High-Intensity Ion Implantation and Energy Impact on the Surface Layer

    Numerical Simulation of Temperature Field Dynamics in Single-Crystal Silicon at Repetitively-Pulsed High-Intensity Ion Implantation and Energy Impact on the Surface Layer

    Publicat 2023
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    Статья на русском языке
    Electrònic Capítol de llibre

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