Ultrawide Bandgap β-Ga2O3 Semiconductor, Theory and Applications
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| Sumari: | online resource (364 pages) text |
| Idioma: | anglès |
| Publicat: |
Melville, New York
AIP Publishing
2023
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| Accés en línia: | https://doi.org/10.1063/9780735425033 |
| Format: | MixedMaterials Electrònic Llibre |
Taula de continguts:
- Introduction — β-Ga2O3 Bulk Growth Techniques — MOCVD Growth of β-Ga2O3 Epitaxy — Molecular Beam Epitaxy of Ga2O3 — Defects in β-Ga2O3: Theory and Microscopic Studies — Dopants in β-Ga2O3: From Theory to Experiments — Electron Transport in β-Ga2O3 from First-Principles — High Breakdown Voltage β-Ga2O3 Schottky Diodes — Etching of β-Ga2O3 — Lateral Transistors on β-Ga2O3: Overview on Design, Technology, and Characterization — Delta-Doped Transistors with β-Ga2O3 — Radiation Effects on β-Ga2O3 Materials and Devices — Future Prospect of β-Ga2O3: Materials, Devices and Circuit Applications — Index.