Microstructural and defect behavior in functionally graded Nb/Zr nanolaminates under irradiation; Journal of Materials Research; Vol. XX
| Parent link: | Journal of Materials Research.— .— Heidelberg: Springer Nature Vol. XX.— 2026.— Article number XX, XX p. |
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| מחברים אחרים: | , , , , , , , , , , , , , |
| סיכום: | Title screen This study investigates the microstructural response and defect behavior of functionally graded Nb/Zr nanolaminates under proton and helium ion irradiation. Proton fluences ranged from 9.6 × 1016 to 3.5 × 1017 ions/cm2, and helium fluences from 3.4 × 1014 to 6 × 1016 ions/cm2. Transmission electron microscopy and X-ray diffraction confirm the structural stability of the nanolaminate, with no phase transformations observed. Positron annihilation spectroscopy indicates that irradiation does not lead to significant bulk defect accumulation; defect-related changes remain weak and highly localized, with helium producing slightly stronger effects than protons. First-principles calculations show that irradiation-induced atomic displacements are smaller than lattice distortions from intrinsic strain and Nb/Zr interface misfit. Helium interstitials induce stronger local relaxation than hydrogen, though both effects are secondary to interfacial strain fields. These results demonstrate that functionally graded Nb/Zr nanolaminates effectively limit defect accumulation and preserve structural integrity under ion irradiation AM_Agreement |
| שפה: | אנגלית |
| יצא לאור: |
2026
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| נושאים: | |
| גישה מקוונת: | https://doi.org/10.1557/s43578-026-01822-9 |
| פורמט: | אלקטרוני Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=686439 |
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| 200 | 1 | |a Microstructural and defect behavior in functionally graded Nb/Zr nanolaminates under irradiation |f Roman Laptev, Dmitriy Krotkevich, Anton Lomygin [et al.] | |
| 203 | |a Текст |b визуальный |c электронный | ||
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| 300 | |a Title screen | ||
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| 330 | |a This study investigates the microstructural response and defect behavior of functionally graded Nb/Zr nanolaminates under proton and helium ion irradiation. Proton fluences ranged from 9.6 × 1016 to 3.5 × 1017 ions/cm2, and helium fluences from 3.4 × 1014 to 6 × 1016 ions/cm2. Transmission electron microscopy and X-ray diffraction confirm the structural stability of the nanolaminate, with no phase transformations observed. Positron annihilation spectroscopy indicates that irradiation does not lead to significant bulk defect accumulation; defect-related changes remain weak and highly localized, with helium producing slightly stronger effects than protons. First-principles calculations show that irradiation-induced atomic displacements are smaller than lattice distortions from intrinsic strain and Nb/Zr interface misfit. Helium interstitials induce stronger local relaxation than hydrogen, though both effects are secondary to interfacial strain fields. These results demonstrate that functionally graded Nb/Zr nanolaminates effectively limit defect accumulation and preserve structural integrity under ion irradiation | ||
| 371 | 0 | |a AM_Agreement | |
| 461 | 1 | |t Journal of Materials Research |c Heidelberg |n Springer Nature | |
| 463 | |t Vol. XX |v Article number XX, XX p. |d 2026 | ||
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a Heterostructure | |
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| 610 | 1 | |a Zr | |
| 610 | 1 | |a Radiation effects | |
| 610 | 1 | |a Defects | |
| 701 | 1 | |a Laptev |b R. S. |c physicist, specialist in the field of non-destructive testing |c Associate Professor of Tomsk Polytechnic University, Doctor of Technical Sciences |f 1987- |g Roman Sergeevich |9 15956 | |
| 701 | 1 | |a Krotkevich |b D. G. |c physicist |c engineer of Tomsk Polytechnic University |f 1990- |g Dmitry Georgievich |9 22434 | |
| 701 | 1 | |a Lomygin |b A. D. |c physicist |c Head of Laboratory, Tomsk Polytechnic University |f 1997- |g Anton Dmitrievich |9 21942 | |
| 701 | 1 | |a Stepanova |b E. N. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of technical sciences |f 1981- |g Ekaterina Nikolaevna |9 18329 | |
| 701 | 1 | |a Murashkina |b T. L. |c Physicist |c Engineer of Tomsk Polytechnic University, Assistant |f 1990- |g Tatiana Leonidovna |9 20984 | |
| 701 | 1 | |a Sidorin |b A. A. |g Aleksey Anatoljevich | |
| 701 | 1 | |a Orlov |b O. S. |g Oleg Sergeevich | |
| 701 | 1 | |a Isaev |b R. Sh. |g Rafael Shakhbaz ogly | |
| 701 | 1 | |a Ibragim |b M. A. |g Makhmud Akhmed Mustafa Akhmed | |
| 701 | 1 | |a Doroshkevich |b A. S. |g Alexander Sergeevich | |
| 701 | 1 | |a Tereshchenko |b A. V. |c specialist in the field of nuclear technologies |c Deputy Chief Engineer of Tomsk Polytechnic University |f 1986- |g Andrey Vasiljevich |9 88851 | |
| 701 | 1 | |a Terentjeva |b D. V. |c physicist |c Engineer of Tomsk Polytechnic University |f 1999- |g Darjya Vitaljevna |9 88521 | |
| 701 | 1 | |a Ognev |b S. O. |c Specialist in the field of nuclear technologies |c Engineer of Tomsk Polytechnic University |f 1999- |g Sergey Olegovich |9 22797 | |
| 701 | 1 | |a Svyatkin |b L. A. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of Physical and Mathematical Sciences |f 1988- |g Leonid Aleksandrovich |9 17747 | |
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