Magnetron sputtering of hot silicon carbide target; Surface and Coatings Technology; Vol. 528
| Parent link: | Surface and Coatings Technology.— .— Amsterdam: Elsevier Science Publishing Company Inc. Vol. 528.— 2026.— Article number 133455, 9 p. |
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| Andre forfattere: | , , , , , |
| Summary: | Title screen This work presents a systematic investigation of silicon carbide (SiC) thin film deposition by magnetron sputtering using cooled and thermally insulated (“hot”) target configurations. Optical emission spectroscopy revealed that hot target operation induces additional Si* and C* emission lines and nonlinear intensity growth, indicating enhanced fluxes of sputtered and sublimated species at power densities above 40 W/cm2. Thermal modeling validated by magnetic field measurements showed that at the maximum applied power density of 62.9 W/cm2, the target surface reaches 1701 K with pronounced thermal gradients, promoting partial sublimation. Under these conditions, deposition rates of 205 ± 10 nm/min (12.3 ± 0.6 μm/h) were achieved – an order of magnitude higher than typical sputtering techniques. Structural analysis demonstrated that coatings deposited without substrate bias remain X-ray amorphous due to low substrate temperatures (∼492 K), consistent with zone T in the structure zone model. Application of a − 100 V substrate bias promoted the formation of nanocrystalline hexagonal SiC (grain size <10 nm) and nearly stoichiometric Si:C ≈ 1:1 composition, as confirmed by XRD and Raman spectroscopy. These results establish hot target magnetron sputtering as an effective route for scalable high rate SiC coating growth Текстовый файл AM_Agreement |
| Sprog: | engelsk |
| Udgivet: |
2026
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| Fag: | |
| Online adgang: | https://doi.org/10.1016/j.surfcoat.2026.133455 |
| Format: | Electronisk Book Chapter |
| KOHA link: | https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=686090 |
MARC
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| 200 | 1 | |a Magnetron sputtering of hot silicon carbide target |f V. A. Grudinin, M. E. Fisher, G. A. Bleykher [et al.] | |
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| 300 | |a Title screen | ||
| 320 | |a References: 58 tit | ||
| 330 | |a This work presents a systematic investigation of silicon carbide (SiC) thin film deposition by magnetron sputtering using cooled and thermally insulated (“hot”) target configurations. Optical emission spectroscopy revealed that hot target operation induces additional Si* and C* emission lines and nonlinear intensity growth, indicating enhanced fluxes of sputtered and sublimated species at power densities above 40 W/cm2. Thermal modeling validated by magnetic field measurements showed that at the maximum applied power density of 62.9 W/cm2, the target surface reaches 1701 K with pronounced thermal gradients, promoting partial sublimation. Under these conditions, deposition rates of 205 ± 10 nm/min (12.3 ± 0.6 μm/h) were achieved – an order of magnitude higher than typical sputtering techniques. Structural analysis demonstrated that coatings deposited without substrate bias remain X-ray amorphous due to low substrate temperatures (∼492 K), consistent with zone T in the structure zone model. Application of a − 100 V substrate bias promoted the formation of nanocrystalline hexagonal SiC (grain size <10 nm) and nearly stoichiometric Si:C ≈ 1:1 composition, as confirmed by XRD and Raman spectroscopy. These results establish hot target magnetron sputtering as an effective route for scalable high rate SiC coating growth | ||
| 336 | |a Текстовый файл | ||
| 371 | 0 | |a AM_Agreement | |
| 461 | 1 | |t Surface and Coatings Technology |c Amsterdam |n Elsevier Science Publishing Company Inc. | |
| 463 | 1 | |t Vol. 528 |v Article number 133455, 9 p. |d 2026 | |
| 610 | 1 | |a электронный ресурс | |
| 610 | 1 | |a труды учёных ТПУ | |
| 610 | 1 | |a SiC coatings | |
| 610 | 1 | |a Hot target | |
| 610 | 1 | |a Magnetron sputtering | |
| 610 | 1 | |a High-rate deposition | |
| 701 | 1 | |a Grudinin |b V. A. |c physicist |c engineer of Tomsk Polytechnic University |f 1995- |g Vladislav Alekseevich |9 21548 | |
| 701 | 1 | |a Fisher |b M. E. |c physicist |c Engineer of Tomsk Polytechnic University |f 2002- |g Maria Eduardovna |9 89227 | |
| 701 | 1 | |a Bleykher (Bleicher) |b G. A. |c physicist |c Professor of Tomsk Polytechnic University, Doctor of Physical and Mathematical Sciences |f 1961- |g Galina Alekseevna |9 15657 | |
| 701 | 1 | |a Ashikhmin |b D. A. |g Denis Aleksandrovich | |
| 701 | 1 | |a Rodriguez (Rodriges) Contreras |b R. D. |c Venezuelan physicist, doctor of science |c Professor of Tomsk Polytechnic University |f 1982- |g Raul David |9 21179 | |
| 701 | 1 | |a Sidelev |b D. V. |c physicist |c Associate Professor of Tomsk Polytechnic University, Candidate of Technical Sciences |f 1991- |g Dmitry Vladimirovich |9 17905 | |
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