Numerical Modeling of Thermal Processes and the Effect of Heating of Near-Surface Silicon Layers on the Titanium Accumulation and Diffusion during High-Intensity Pulsed Ion Implantation; Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques; Vol. 19, iss. 4

Numerical Modeling of Thermal Processes and the Effect of Heating of Near-Surface Silicon Layers on the Titanium Accumulation and Diffusion during High-Intensity Pulsed Ion Implantation; Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques; Vol. 19, iss. 4

Detalles Bibliográficos
Parent link:Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques.— .— New York: Springer Science+Business Media LLC.
Vol. 19, iss. 4.— 2025.— P. 880-884
Autor Principal: Ivanova A. I. Anna Ivanovna
Outros autores: Bleykher (Bleicher) G. A. Galina Alekseevna, Zaytsev Daniil Dmitrievich D. D.
Summary:Currently, industrialized countries are paying more and more attention to ion plasma technologies. That is because local doping of a certain zone or the entire surface instead of changing the properties of the sample’s entire volume is possible with the help of beam ion-plasma technologies. Ion bombardment changes almost all properties of the solid surface and the surface layer. The physical and mechanical properties of surface and near-surface layers of materials are the most important factors determining the durability and reliability of processed products. The article has considered the features of thermal processes and the effect of pulsed heating of near-surface silicon layers on diffusion transfer under conditions of synergy of high-intensity titanium ion implantation and the energy impact of a repetitively-pulsed beam of high power density on the surface in order to increase the ion alloying depth due to radiation-stimulated diffusion when heating of the entire sample is limited. The article presents the results of calculating the space-time distribution of temperature fields in silicon and the diffusion transfer of the implanted dopant under the action of submillisecond titanium ion beams
Текстовый файл
AM_Agreement
Idioma:inglés
Publicado: 2025
Subjects:
mathematical modeling
temperature gradients
low-energy ion
high-intensity implantation
diffusion
silicon
электронный ресурс
труды учёных ТПУ
Acceso en liña:https://doi.org/10.1134/S1027451025701277
Formato: Electrónico Capítulo de libro
KOHA link:https://koha.lib.tpu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=685900

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